SCOPUS 정보 검색 플랫폼

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4651, Issue , 2002, Pages 80-91

High power and high brightness laser diode structures at 980 nm using Al-free materials

(8) Krakowski, Michel a Auzanneau, Sophie Charlotte a Calligaro, Michel a Parillaud, Olivier a Collot, P a Lecomte, Michel a Boulant, Benoit a Fillardet, Thierry a

a THALES RESEARCH AND TECHNOLOGY (France)

Author keywords

Bar of laser diodes; Beam quality; Broad area laser; Gain guiding; High brightness laser diode; High power laser diode; Index guiding; Reliability; Semiconductor laser; Tapered laser structure

Indexed keywords

CURRENT DENSITY; DOPING (ADDITIVES); WAVELENGTH DIVISION MULTIPLEXING;

MULTIMODE BROAD AREA LASERS;

SEMICONDUCTOR LASERS;

EID: 0036059141 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.467936 Document Type: Conference Paper

Times cited : (25)

References (17)

1
- 0028380935
- Degradation behavior of 0.98 μm strained quantum well InGaAs/AlGaAs lasers under high-power operation
- February
- (1994) IEEE Journal of quantum electronics , vol.30 , Issue.2 , pp. 471-476
- Fukuda, M.¹ Okayasu, M.² Temmyo, J.³ Nakano, J.⁴

2
- 0026171491
- High-power 0.8 μm InGaAsP-GaAs SQW lasers
- June
- (1991) IEEE Journal of quantum electronics , vol.27 , Issue.6 , pp. 1531-1536
- Garbuzov, D.¹ Antonishkis, N.² Bondarev, A.³ Gulakov, A.⁴ Zhigulin, S.⁵ Katsavets, N.⁶ Kochergin, A.⁷ Rafailov, E.⁸

3
- 0001478156
- Dark-line resistant, aluminium-free diode laser at 0.8 μm
- December
- (1992) IEEE Photonics Technology Letters , vol.4 , Issue.12 , pp. 1328-1330
- Yellen, S.L.¹ Shepard, A.H.² Harding, C.M.³ Baumann, J.A.⁴ Waters, R.G.⁵ Garbuzov, D.Z.⁶ Pjataev, V.⁷ Kochergin, V.⁸ Zory, P.S.⁹

4
- 20544462283
- High power (>10 W) continuous-wave operation from 100 μm aperture 0.97 μm emitting Al free diode lasers
- 31 August
- (1998) Applied Physics Letters , vol.73 , Issue.9 , pp. 1182-1184
- Al-Muhanna, A.¹ Mawst, L.J.² Botez, D.³ Garbuzov, D.Z.⁴ Martinelli, R.U.⁵ Connolly, J.C.⁶

5
- 0027617348
- Operating characteristics of a high-power monolithically integrated flared amplifier master oscillator power amplifier
- June
- (1993) IEEE J. of Quantum Electronics , vol.23 , Issue.6 , pp. 2052-2057
- O'Brien, S.¹ Welch, D.F.² Parke, R.A.³ Mehuys, D.⁴ Durzo, K.⁵ Lang, R.J.⁶ Waarts, R.⁷ Scifres, D.⁸

6
- 0032595739
- 980 nm master oscillator power amplifiers with nonabsorbing mirrors
- September
- (1999) IEEE Photonics Technology Letters , vol.11 , Issue.9
- Lammert, R.M.¹ Ungar, J.E.² Osowski, M.L.³ Qi, H.⁴ Newkirk, M.A.⁵ Chaim, N.B.⁶

7
- 0027607334
- High power, strained layer amplifiers and lasers with tapered gain region
- June
- (1993) IEEE Photonics Technology Letters , vol.5 , Issue.6 , pp. 605-608
- Kintzer, E.S.¹ Walpole, J.N.² Chinn, S.R.³ Wang, C.A.⁴ Missaggia, L.J.⁵

8
- 0032069347
- High brightness tapered semiconductor laser oscillators and amplifiers with low modal gain epilayer structures
- May
- (1998) IEEE Photonics Technology Letters , vol.10 , Issue.5 , pp. 654-656
- Mikulla, M.¹ Chazan, P.² Schmitt, A.³ Wetzel, A.⁴ Walther, M.⁵ Kiefer, R.⁶ Pletschen, W.⁷ Braunstein, J.⁸ Weimann, G.⁹

9
- 0033530980
- 9.5 W CW output power from high brightness 980 nm InGaAs/AlGaAs tapered laser arrays
- th January
- (1999) Elec. Lett. , vol.35 , Issue.1 , pp. 43-44
- Wilson, F.J.¹ Lewandowski, J.J.² Nayar, B.K.³ Robbins, D.J.⁴ Williams, P.J.⁵ Carr, N.⁶ Robson, F.O.⁷

10
- 0028378688
- 980 nm aluminium free InGaAs/InGaAsP/InGaP GRIN-SCH SL-QW lasers
- February
- (1994) IEEE Journal of Quantum Electronics , vol.30 , Issue.2 , pp. 408-414
- Ohkubo, M.¹ Ijichi, T.² Iketani, A.³ Kikuta, T.⁴

11
- 0028375257
- Aluminium free 980 nm GaInAs/GaInAsP/GaInP pump lasers
- February
- (1994) IEEE Journal of Quantum Electronics , vol.30 , Issue.2 , pp. 415-423
- Asonen, H.¹ Ovtchinnikov, A.² Zhang, G.³ Näppi, J.⁴ Savolainen, P.⁵ Pessa, M.⁶

12
- 0029322718
- High power highly reliable operation of 0.98 μm InGaAs-InGaP strain compensated single quantum well lasers with tensile strained InGaAsP barriers
- June
- (1995) IEEE journal of selected topics in quantum electronics , vol.1 , Issue.2 , pp. 189-195
- Sagawa, M.¹ Toyonaka, T.² Hiramoto, K.³ Shinoda, K.⁴ Uorni, K.⁵

13
- 0030172191
- Semiconductor amplifiers and lasers with tapered gain regions
- (1996) Optical and Quantum Electronics , vol.28 , pp. 623-645
- Walpole, J.N.¹

14
- 0035263964
- How to launch 1 W into single-mode fiber from a single 1.48-μm flared resonator
- March/April
- (2001) IEEE J. of Selected Topics in Quantum Electronics , vol.7 , Issue.2 , pp. 111-123
- Delepine, S.¹ Gerard, F.² Pinquier, A.³ Fillon, T.⁴ Pasquier, J.⁵ Locatelli, D.⁶ Chardon, J.-P.⁷ Bissesur, H.K.⁸ Bouché, N.⁹ Boubal, F.R.¹⁰ Salet, P.¹¹

15
- 0025546679
- New developments in laser resonators
- invited paper, Optical Resonators
- (1990) Proc. of SPIE , vol.1224 , pp. 1-14
- Siegman, A.E.¹

16
- 0036028672
- Selconsistent electrical, thermal and optical model of high brightness tapered lasers
- 01-14
- (2002) Proc. of SPIE , vol.4646
- Borruel, L.¹ Sujecki, S.² Esquivias, I.³ Wykes, J.⁴ Sewell, P.⁵ Benson, T.⁶ Larkins, E.⁷ Arias, J.⁸ Romero, B.⁹

17
- 0032223958
- Improved beam quality for high power tapered laser diodes with LMG (low modal gain)-epitaxie layer structures
- Proc. of SPIE , vol.3284 , pp. 72-79
- Mikulla, M.¹ Schmitt, A.² Chazan, P.³ Wetzel, A.⁴ Walther, M.⁵ Kiefer, R.⁶ Pletschen, W.⁷ Braunstein, J.⁸ Weimann, G.⁹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.