CW technique for measurement of linewidth enhancement factor: Application to 735-nm tensile-strained GaAsP quantum-well lasers

IEEE Photonics Technology Letters

Volumn 16, Issue 6, 2004, Pages 1432-1434

  Rodriguez D ^a   Borruel, L ^a   Esquivias, I ^a   Wenzel, H ^b   Sumpf, B ^b   Erbert, G ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

GaAsP; Linewidth enhancement factor; Quantum well (QW) laser; Semiconductor lasers

Indexed keywords

NUMERICAL METHODS; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION; TENSILE STRESS;

CONTINOUS WAVE; ENHANCEMENT FACTOR; GALLIUM ARSENIC PHOSPHIDE; LINEWIDTH;

SEMICONDUCTOR LASERS;

EID: 2942737442     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.826761     Document Type: Article

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