Emission of strained-layer InGaAs quantum well under high-injection level: study of bandfilling and broadening effects

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2693, Issue , 1996, Pages 640-651

  Akimova, I V ^a   Eliseev, Petr G ^a  

^a LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMISSION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

BANDFILLING EFFECT; INJECTION CURRENT DENSITY; SPECTRAL BROADENING; SPONTANEOUS EMISSION;

SEMICONDUCTOR LASERS;

EID: 0029728226     PISSN: None     EISSN: None     Source Type: None    
DOI: 10.1117/12.238999     Document Type: Conference Paper

References (10)