Linewidth enhancement factor and near-field pattern in tunnel injection In0.4Ga0.6As self-assembled quantum dot lasers

Electronics Letters

Volumn 39, Issue 20, 2003, Pages 1443-1445

  Fathpour, S ^a   Bhattacharya, P ^a   Pradhan, S ^a   Ghosh, S ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

TUNNEL INJECTION;

QUANTUM WELL LASERS;

EID: 0142116164     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030944     Document Type: Article

References (12)

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