Single-mode distributed feedback and microlasers based on quantum-dot gain material

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 8, Issue 5, 2002, Pages 1035-1044

  Reithmaier, Johann Peter ^a   Forchel, Alfred ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

Distributed feedback laser; Microlaser; Modulation bandwidth; Quantum dot laser; Self organized growth

Indexed keywords

DIFFRACTION GRATINGS; DISTRIBUTED FEEDBACK LASERS; ELECTRIC CURRENTS; EPITAXIAL GROWTH; LASER MODES; LIGHT EMISSION; MIRRORS; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; WAVEGUIDES;

BRAGG MIRRORS; MICROLASERS; MODULATION BANDWIDTH; SIDEMODE SUPPRESSION RATIOS; THRESHOLD CURRENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036765471     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2002.804233     Document Type: Article

References (34)

1. M. Asada, Y. Miyamoto, and Y. Suematsu, "Gain and the threshold of three dimensional quantum-box lasers," IEEE J. Quantum Electron., QE-22, pp. 1915-1921, 1986.
2. V. M. Ustinov, A. Y. Egorov, A. R. Kovsh, A. E. Zhukov, M. V. Maximov, A. F. Tsatsulinikov, N. Y. Gordeev, S. V. Zaitsev, Y. M. Shernyakov, N. A. Bert, P. S. Kop'ev, Z. I. Alferov, N. N. Ledentsov, J. Boehrer, D. Bimberg, A. O. Kosogov, P. Werne, and U. Goesele, "Low-threshold injection lasers based on vertically coupled quantum dots," J. Cryst. Growth, vol. 175, pp. 689-695, 1997.
3. D. L. Huffaker, G. Park, Z. Zhou, O. B. Shchekin, and D. G. Deppe, "1.3 μm room-temperature GaAs-based quantum dot laser," Appl. Phys. Lett., vol. 73, pp. 2564-2566, 1998.
4. L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy. "Optical characteristics of 1.24 μm InAs quantum dot laser diodes," IEEE Photon. Technol. Lett., vol 11, pp. 931-933, Aug. 1999.
5. A. Stintz, G. T. Liu, H. Li, L. F. Lester, and K. J. Malloy, "Low-threshold current density 1.3 μ InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure." IEEE Photon. Technol. Lett., vol. 12, pp. 591-593, June 2000.
6. Y. M. Shernyakov, D. A. Bedarev, E. Y. Kondrat'eva, P. S. Kop'ev, A. R. Kovsh, N. A. Maleev, M. V. Maximov, S. S. Mikhirin, A. F. Tsatsul'nikov, V. M. Ustinov, B. V. Volovik, A. E. Zhukov, Z. J. Alferov, N. N. Ledentsov, and D. Bimberg, "1.3 μm GaAs-based laser using quantum dots obtained by activated spinodal decomposition," Electron. Lett., vol. 35, pp. 898-900, May 1999.
7. F. Schäfer, J. P. Reithmaier, and A. Forchel, "High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer," Appl. Phys. Lett., vol. 74, pp. 2915-2917, 1999.
8. G. Park, O. B. Shckekin, D. L. Huffaker, and D. G. Deppe, "InGaAs quantum dot lasers with submilliamp thresholds and ultra-low threshold current density below room temperature," Electron. Lett., vol. 36, pp. 1283-1284, July 2000.
9. 0.85As quantum well," Electron. Lett., vol. 35, pp. 1163-1165, July 1999.
10. F. Klopf, J. P. Reithmaier, and A. Forchel, "Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers," Appl. Phys. Lett., vol. 77, pp. 1419-1421, 2000.
11. F. Klopf, J. P. Reithmaier, A. Forchel, P. Collot, and M. Krakowski, "High performance 980 nm quantum dot lasers for high power applications," Electron. Lett., vol. 37, pp. 353-354, Mar. 2001.
12. M. Grundmann, F. Heinrichsdorff, N. N. Ledentsov, C. Ribbat, D. Bimberg, A. E. Zhukov, A. R. Kovsh, M. V. Maximov, Y. M. Shernyakov, D. A. Lifshits, V. M. Ustinov, and Z. J. Alferov, "Progress in quantum dot lasers: 1100 nm, 1300 nm, and high power applications," Jpn. J. Appl. Phys., vol. 39, pp. 2341-2343, 2000.
13. O. B. Shchekin, G. Park, D. L. Huffaker, Q. Mo, and D. G. Deppe, "Low-threshold continuous-wave two-stack quantum-dot laser with reduced temperature sensitivity," IEEE Photon. Technol. Lett., vol. 12, pp. 1120-1122, Sept. 2000.
14. K. Mukai, Y. Nakata, K. Otsubo, M. Sugawara, N. Yokoyama, and H. Ishikawa, "1.3 μ CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots," IEEE J. Quantum Electron., vol. 36, pp. 472-478, Apr. 2000.
15. M. Kamp, M. Schmitt, J. Hofmann, F. Schäfer, J. P. Reithmaier, and A. Forchel, "InGaAs/AlGaAs quantum dot DFB lasers operating up to 213°C," Electron. Lett., vol. 35, pp. 2036-2037, Nov. 1999.
16. T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, "Gain and linewidth enhancement factor in InAs quantum-dot laser diodes," IEEE Photon. Technol. Lett., vol. 11, pp. 1527-1529, Dec. 1999.
17. H. Saito, K. Nishi, A. Kamei, and S. Sogou, "Low chirp observed in directly modulated quantum dot lasers," IEEE Photon. Technol. Lett., vol. 10, pp. 1298-1300, Oct. 2000.
18. F. Klopf, J. P. Reithmaier, and A. Forchel, "Low threshold high efficiency MBE grown GaInAs/(Al)GaAs quantum dot lasers emitting at 980 nm," J. Cryst. Growth, vol. 227-228, pp. 1151-1154, 2001.
19. F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel, "Correlation between the gain profile and the temperature-induced wavelength-shift of quantum dot lasers," Appl. Phys. Lett., vol. 81, pp. 217-219, 2002.
20. F. Klopf, St. Deubert, J. P. Reithmaier, A. Forchel, P. Collot, and M. Krakowski, "980 nm quantum dot lasers for high power applications," in Optoelectonics 2002 Symp. Novel In-Plane Semiconductor Lasers VI (OE13). Bellingham, WA: SPIE, Jan. 2002, vol. 4651, pp. 294-304.
21. F. Klopf, R. Krebs, J. P. Reithmaier, and A. Forchel, "High temperature operating 1.3 μm quantum-dot lasers for telecommunications applications," IEEE Photon. Technol. Lett., vol. 13, pp. 764-766, Aug. 2001.
22. R. Krebs, F. Klopf, J. P. Reithmaier, and A. Forchel, "High performance 1.3 μm quantum-dot lasers," Jpn. J. Appl. Phys., vol. 41, pp. 1158-1161, 2002.
23. F. Schäfer, B. Mayer, J. P. Reithmaier, and A. Forchel, "High-temperature properties of GaInAs/AlGaAs lasers with improved carrier confinement by short-period superlattice quantum well barriers," Appl. Phys. Lett., vol. 73, pp. 2863-2865, 1998.
24. P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, "Low-threshold quantum dot lasers with 201 nm tuning range," Electron. Lett., vol. 36, pp. 1544-1545, Aug. 2000.
25. M. Kamp, J. Hofmann, F. Schäfer, A. Forchel, and J. P. Reithmaier, "Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers," Appl. Phys. Lett., vol. 74, pp. 483-485, 1999.
26. K. Avary, S. Rennon, F. Klopf, J. P. Reithmaier, and A. Forchel, "Reactive ion etching of deeply etched DBR-structures with reduced air-gaps for highly reflective monolithically integrated laser mirrors," Microelectron. Eng., vol. 57-58, pp. 593-598, 2001.
27. R. Jambunathan and J. Singh, "Design studies for distributed Bragg reflectors for short-cavity edge-emitting lasers," IEEE J. Quantum Electron., vol. 33, pp. 1180-1189, July 1997.
28. K. J. Kasunic, "Design equations for the reflectivity of deep-etch distributed Bragg reflector gratings," J. Lightwave Technol., vol. 11, pp. 425-429, Mar. 2000.
29. S. Rennon, K. Avary, F. Klopf, A. Wolf, M. Emmerling, J. P. Reithmaier, and A. Forchel, "Quantum-dot microlasers," Electron. Lett., vol. 36, pp. 1548-1550, Aug. 2000.
30. S. Rennon, F. Klopf, J. P. Reithmaier, and A. Forchel, "12 μm-long edge-emitting quantum-dot laser," Electron. Lett., vol. 37, pp. 690-691, May 2001.
31. S. Rennon, K. Avary, F. Klopf, J. P. Reithmaier, and A. Forchel, "Edge-emitting microlasers with one active layer of quantum dots," IEEE J. Select. Topics Quantum Electron., vol. 7, pp. 300-305, Mar./Apr. 2001.
32. S. Rennon, F. Klopf, J. P. Reithmaier, and A. Forchel, "Quantum dot microlasers as high-speed light sources for monolithic integration," in Eur. Conf. Optical Communication, Amsterdam, The Netherlands, Sept. 2001, p. 26.
33. F. Klopf, R. Krebs, A. Wolf, M. Emmerling, J. P. Reithmaier, and A. Forchel, "InAs/GaInAs quantum dot DFB lasers emitting at 1.3 μm," Electron. Lett., vol. 37, pp. 634-636, May 2001.
34. R. Krebs, F. Klopf, S. Rennon, J. P. Reithmaier, and A. Forchel, "High frequency properties of 1.3 μm emitting distributed feedback quantum dot laser," Electron. Lett., vol. 37, pp. 1223-1226, 2001.