Low chirp operation in 1.6 μm quantum dot laser under 2.5 GHz direct modulation

Electronics Letters

Volumn 37, Issue 21, 2001, Pages 1293-1295

  Saito, H ^a   Nishi, K ^a   Sugou, S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; SPECTRUM ANALYSIS; SUBSTRATES; WAVELENGTH DIVISION MULTIPLEXING;

QUANTUM DOT LASERS;

SEMICONDUCTOR LASERS;

EID: 0035845973     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010887     Document Type: Article

References (6)

1. Gain and linewidth enhancement factor in InAs quantum-dot laser diodes
2. Low chirp observed in directly modulated quantum dot lasers
3. Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers
4. Low-threshold current density 1.3μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure
5. InAs/GaInAs quantum dot DFB lasers emitting at 1.3μm
6. Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates