Influences of unconfined states on the optical properties of quantum-well structures

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 129-135

  Ning, C Z ^a,b,e,f   Chow, W W ^c   Bossert, David J ^d,g,h,i   Indik, R A ^a   Moloney, J V ^a  

^a UNIVERSITY OF ARIZONA   (United States)

^b NASA AMES RESEARCH CENTER   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

^e NORTHWEST UNIVERSITY   (China)

^f UNIVERSITY OF STUTTGART   (Germany)

^g UNIVERSITY OF PORTLAND   (United States)

^h OREGON HEALTH AND SCIENCE UNIVERSITY   (United States)

ⁱ Air Force Phillips Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; LASER THEORY; REFRACTIVE INDEX; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

DIFFERENTIAL GAIN; OPTICAL SUSCEPTIBILITY;

QUANTUM WELL LASERS;

EID: 0031108882     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605642     Document Type: Article

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