Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 μm quantum dot lasers

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2004, Pages 57-58

  Marko, I P ^a   Adams, A R ^a   Sweeney, S J ^a   Sellers, I R ^b   Mowbray, D J ^b   Skolnick, M S ^b   Liu, H Y ^b   Groom, K M ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); CURRENT DENSITY; ELECTRIC CURRENTS; GROUND STATE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS; WAVEGUIDES;

CLADDING LAYERS; QUANTUM DOT LASERS; TEMPERATURE SENSITIVITY; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 17044383348     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)

1. I. P. Marko, A. D. Andreev, A. R. Adams, R. Krebs, J. P. Reithmaier, A. Forchel, "The Role of Auger Recombination in InAs 1.3 μm Quantum Dot Lasers Investigated Using High Hydrostatic Pressure", IEEE Journal of Selected Topics of Quantum Electronics, vol. 9, no. 5, 2003, pp.1300-1307.