Nanoscale patterning of self-assembled monolayers with electrons

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3414-3418

  Golzhauser A ^a   Geyer, W ^a   Stadler, V ^a   Eck, W ^a   Grunze, M ^a   Edinger, K ^b   Weimann, Th ^c   Hinze, P ^c  

^a UNIVERSITY OF HEIDELBERG   (Germany)

^b UNIVERSITY OF MARYLAND   (United States)

^c PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON BEAM LITHOGRAPHY; ETCHING; ION BEAMS; MASKS; MONOLAYERS; NANOSTRUCTURED MATERIALS; PHOTORESISTS; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY;

SELF ASSEMBLED MONOLAYERS (SAM);

GOLD;

EID: 0343773452     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1319711     Document Type: Article

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