High-selectivity pattern transfer processes for self-assembled monolayer electron beam resists

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 1446-1450

  Carr, D W ^a   Lercel, M J ^a   Whelan, C S ^a   Craighead, H G ^a   Seshadri, K ^b   Allara, D L ^b  

^a Department of Population Medicine and Diagnostic Sciences   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; ELECTROLESS DEPOSITION; ELECTRON BEAM RESIST; ETCH MASK; INTERMEDIATE LAYERS; NATIVE OXIDES; NICKEL LAYERS; NOVEL PROCESS; PATTERN TRANSFER PROCESS; POLY-CRYSTALLINE SILICON; REACTIVE ION ETCH; RESIST LAYERS; SAMS; SELECTIVE DEPOSITION; SELECTIVE REMOVAL; SUBSTRATE MODIFICATIONS; ULTRA-THIN;

CYCLOTRONS; ELECTROLESS PLATING; ELECTRON BEAMS; NICKEL PLATING; POLYSILICON; SILICON COMPOUNDS; SILICON OXIDES;

SELF ASSEMBLED MONOLAYERS;

EID: 78649958759     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580559     Document Type: Article

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