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Volumn 15, Issue 3, 1997, Pages 1446-1450
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High-selectivity pattern transfer processes for self-assembled monolayer electron beam resists
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Author keywords
[No Author keywords available]
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Indexed keywords
BI-LAYER;
ELECTROLESS DEPOSITION;
ELECTRON BEAM RESIST;
ETCH MASK;
INTERMEDIATE LAYERS;
NATIVE OXIDES;
NICKEL LAYERS;
NOVEL PROCESS;
PATTERN TRANSFER PROCESS;
POLY-CRYSTALLINE SILICON;
REACTIVE ION ETCH;
RESIST LAYERS;
SAMS;
SELECTIVE DEPOSITION;
SELECTIVE REMOVAL;
SUBSTRATE MODIFICATIONS;
ULTRA-THIN;
CYCLOTRONS;
ELECTROLESS PLATING;
ELECTRON BEAMS;
NICKEL PLATING;
POLYSILICON;
SILICON COMPOUNDS;
SILICON OXIDES;
SELF ASSEMBLED MONOLAYERS;
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EID: 78649958759
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.580559 Document Type: Article |
Times cited : (41)
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References (12)
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