H2 cleaning of silicon wafers before low-temperature epitaxial growth by ultrahigh vacuum/chemical vapor deposition

Journal of the Electrochemical Society

Volumn 143, Issue 7, 1996, Pages 2361-2364

  Oda, Katsuya ^a   Kiyota, Yukihiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; HYDROGEN; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; PRESSURE EFFECTS; SURFACE CLEANING; SURFACE ROUGHNESS;

HIGH PRESSURE HYDROGEN CLEANING; HYDROGEN PARTIAL PRESSURE; WAFER PRECLEANING;

SILICON WAFERS;

EID: 0030194977     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837008     Document Type: Article

References (14)

1. F. Sato, H. Takemura, T. Tashiro, H. Hirayama, M. Hiroi, K. Koyama, and M. Nakamae, IEDM Tech. Dig., 607 (1990).
2. T. Yamazaki, I. Namura, H. Goto, A. Tahara, and T. Ito, ibid., 309 (1990).
3. T. F. Meister, R. Stengl, H. W. Meul, R. Weyl, P. Packan, A. Felder, H. Klose, R. Schreiter, J. Popp, H. M. Rein, and L. Treitinger, ibid., 401 (1992).
4. E. F. Crabbé, B. S. Meyerson, J. M. C. Stork, and D. L. Harame, ibid., 83 (1993).
5. A. Hori, T. Hirai, M. Tanaka, H. Nakaoka, H. Umimoto, and M. Yasuhira, ibid., 909 (1993).
6. B. M. Berry, in Fundamentals of Silicon Integrated Device Technology, R. M. Burger and R. P. Donovan, Editors, p. 347, Solid State Physical Electronics Series, Prentice-Hall, Inc., Englewood Cliffs, NJ (1967).
7. T. N. Nguyen, D. L. Harame, J. M. C. Stork, F. K. LeGoues, and B. S. Meyerson, IEDM Tech. Dig., 304 (1986).
8. E. Kasper and K. Wörner, This Journal, 132, 2481 (1985).
9. A. Ishizaka and Y. Shiraki, ibid., 133, 666 (1986).
10. E. G. Alexander and W. R. Runyan, Trans. Metal. Soc., AIME, 236, 284 (1966).
11. A. Ohkura, H. Oku, K. Matsumoto, and T. Ohmi, p. 599 of Extended Abstracts of the 23rd Conference on Solid State Devices and Materials, Yokohama (1991).
12. T. Y. Hsieh, K. H. Jung, D. L. Kwong, T. H. Koschmieder, and J. C. Thompson, This Journal, 139, 1971 (1992).
13. M. Liehr, M. Offenberg, S. R. Kasi, G. W. Rubloff, and K. Holloway, p. 1099 of Extended Abstracts of the 22nd Conference on Solid State Devices and Materials, Sendai (1990).
14. W. Kern and D. Puotinen, RCA Rev., 31, 187 (1970).