Low-temperature preparation of oxygen- and carbon-free silicon and silicon-germanium surfaces for silicon and silicon-germanium epitaxial growth by rapid thermal chemical vapor deposition

Journal of the Electrochemical Society

Volumn 147, Issue 12, 2000, Pages 4652-4659

  Carroll, M S ^a   Sturm, J C ^a   Yang, M ^a  

^a PRINCETON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL CLEANING; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; LOW TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SUBSTRATES;

RAPID THERMAL CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0034498126     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1394118     Document Type: Article

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