Diffusion of near surface defects during the thermal oxidation of silicon

Journal of Applied Physics

Volumn 81, Issue 12, 1997, Pages 8109-8111

  Ganem, J J ^a   Trimaille, I ^a   Andre P ^a   Rigo, S ^a   Stedile, F C ^b   Baumvol, I J R ^b  

^a CNRS   (France)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004660027     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365420     Document Type: Article

References (9)

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