Temperature and Pressure Dependence of the Oxygen Exchange at the SiO2-Si Interface, O2 ↔ SiO2, during Dry Thermal Oxidation of Silicon

Journal of Physical Chemistry B

Volumn 103, Issue 45, 1999, Pages 9910-9914

  Akermark T ^a,b   Ganem, J J ^a   Trimaille, I ^a   Vickridge, I ^a   Rigo, S ^a  

^a SORBONNE UNIVERSITÉ   (France)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011021207     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp991788e     Document Type: Article

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