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Volumn 142, Issue 1-3, 2001, Pages 285-289
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A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
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Author keywords
Adaptive FVM; Load balancing; Parallel semiconductor device simulation
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Indexed keywords
APPROXIMATION THEORY;
COMPUTATION THEORY;
COMPUTER SIMULATION;
CURRENT VOLTAGE CHARACTERISTICS;
ERROR ANALYSIS;
FINITE VOLUME METHOD;
PARALLEL ALGORITHMS;
MONOTONE ITERATIONS;
MOSFET DEVICES;
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EID: 0035893071
PISSN: 00104655
EISSN: None
Source Type: Journal
DOI: 10.1016/S0010-4655(01)00347-2 Document Type: Conference Paper |
Times cited : (28)
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References (11)
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