Migration energy for the silicon self-interstitial

Journal of Applied Physics

Volumn 86, Issue 1, 1999, Pages 214-216

  Hallén, Anders ^a   Keskitalo, Niclas ^a,b   Josyula, Lalita ^a   Svensson, Bengt G ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ERICSSON RADIO SYSTEMS AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001733642     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370719     Document Type: Article

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