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Volumn 61, Issue 12, 2000, Pages 8155-8161

First-principles calculations of interstitial boron in silicon

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Indexed keywords


EID: 0000016244     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.8155     Document Type: Article
Times cited : (82)

References (32)
  • 24
    • 0004101311 scopus 로고
    • A. D. Becke, in The Challenge of d and f Electrons, edited by D. R. Salahub and M. C. Zerner, ACS Symposium Series No. 394 (American Chemical Society, Washington, DC, 1989), p. 165, and references therein.
    • (1989) The Challenge of d and f Electrons , pp. 165
    • Becke, A.1
  • 31
    • 0001137488 scopus 로고    scopus 로고
    • G. D. Watkins, in Defects and Diffusion in Silicon Processing, edited by T. Dias de la Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty, MRS Symposia Proceedings No. 469 (Materials Research Society, Pittsburgh, 1997), p. 139.
    • (1997) MRS Symposia Proceedings , pp. 139
    • Watkins, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.