Preparation of Pt/SrBi2Ta2O9/Tio2/Si structures for metal-ferroelectric-insulator-semiconductor field-effect-transistors

Journal of the Korean Physical Society

Volumn 37, Issue 6, 2000, Pages 1072-1076

  Park, Joo Dong ^a   Oh, Tae Sung ^a  

^a Hong Ik University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034347706     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.37.1072     Document Type: Article

References (15)

1. J. F. Scott and C. A. Paz de Araujo, Science 246, 1400 (1989).
2. J. F. Scott, Ferroelectrics Rev. 1, 85 (1998).
3. D. J. Yeon, J. D. Park and T. S. Oh, J. Korean Phys. Soc. 30, S183 (1998).
4. W. J. Lee, B. G. Yu, J. S. Lyu, J. H. Lee, B. W. Kim, C. H. Shin and H. C. Lee, J. Korean Phys. Soc. 35, S509 (1999).
5. J. L. Moll and Y. Tarui, IEEE Trans. Electron Devices ED-10, 338 (1963).
6. Y. Shichi, S. Tanimoto, T. Goto, K. Kuroiwa and Y. Tarui, Jpn. J. Appl. Phys. 33, 5172 (1994).
7. Y. T. Kim and D. S. Shin, Appl. Phys. Lett. 71, 3507 (1997).
8. H. N. Lee, Y. T. Kim and S. H. Choh, J. Korean Phys. Soc. 34, 454 (1999).
9. J. Senzaki, K. Kurihara, N. Nomura and O. Mitsunaga, Jpn. J. Appl. Phys. 37, 5150 (1998).
10. S. T. Park, D. S. Shin and I. H. Choi, J. Korean Phys. Soc. 32, S1704 (1998).
11. E. Tokumitsu, K. Itani, B. Moon and H. Ishiwara, Jpn. J. Appl. Phys. 34, 5202 (1995).
12. P. Alexsandrov, J. Koprinarova and D. Todorov, Vacuum 47, 1333 (1996).
13. D. K. Schroder, Semiconductor Materials and Device Characterization, 2nd ed. (Wiely, New York, 1998), Chap. 6.
14. L. D. McMillan, M. Huffman, T. L. Roberts, M. C. Scott and C. A. Paz de Araujo, Integrated Ferroelectrics 4, 319 (1994).
15. S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era (Lattice Press, Sunset Beach, 1986), Vol. 1, Chap. 7.