Etching characteristics of SrBi2Ta2O9 film with Ar/CHF3 plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1354-1358

  Seo, Jung Woo ^a   Lee, Do Haing ^b   Lee, Won Jae ^c   Yu, Byoung Gon ^c   Kwon, Kwang Ho ^d   Yeom, Geun Young ^b   Chang, Eui Goo ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^d Hanseo University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; COMPOSITION EFFECTS; FERROELECTRIC MATERIALS; FLUOROCARBONS; MOLECULAR WEIGHT; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; STRONTIUM COMPOUNDS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

FERROELECTRIC RANDOM ACCESS MEMORY (FRAM); MAGNETICALLY-ENHANCED INDUCTIVELY-COUPLED PLASMAS (MEICP);

DIELECTRIC FILMS;

EID: 0001593349     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582353     Document Type: Article

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