Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon-nitride/SiO2 stack gate dielectrics for advanced complementary metal-oxide-semiconductor technology

Applied Physics Letters

Volumn 79, Issue 21, 2001, Pages 3488-3490

  Khosru, Quazi Deen Mohd ^a,b   Nakajima, Anri ^a   Yoshimoto, Takashi ^a   Yokoyama, Shin ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

^b BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035914788     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1420586     Document Type: Article

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