Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate

Journal of Applied Physics

Volumn 85, Issue 4, 1999, Pages 2385-2389

  Perlin, Piotr ^a   Mattos, Laila ^a   Shapiro, Noad A ^a   Kruger, Joachim ^a   Wong, William S ^b   Sands, Tim ^b   Cheung, Nathan W ^c   Weber, Eicke R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Lawrence Berkeley National Laboratory   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000192974     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369554     Document Type: Article

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