Study of the strain in InN thin films using synchrotron x-ray scattering

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4, 2002, Pages 1932-1935

  Hur, Tae Bong ^a,b   Lee, Ik Jae ^a,b   Kim, Jin Woo ^a,b   Hwang, Yoon Hwae ^a,b   Kim, Hyung Kook ^a,b,c  

^a Pusan National University   (South Korea)

^b POSTECH   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Epitaxy; InN; Sputtering; Strain; Thin film; X ray scattering

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; LATTICE CONSTANTS; MAGNETRON SPUTTERING; MORPHOLOGY; SPUTTER DEPOSITION; STRAIN; SURFACE ROUGHNESS; SURFACES; SYNCHROTRONS; THIN FILMS; X RAY SCATTERING;

LATTICE STRAIN; RADIO FREQUENCY MAGNETRON SPUTTERING; STRAIN EVOLUTION; SYNCHROTRON X RAY SCATTERING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0036529217     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1932     Document Type: Article

References (13)

1. The blue laser diode GaN based light emitters and lasers