Band anticrossing effects in MgyZn1-yTe 1-xSex alloys

Applied Physics Letters

Volumn 80, Issue 1, 2002, Pages 34-36

  Wu, J ^a   Walukiewicz, W ^b   Yu, K M ^b   Ager, J W ^b   Shan, W ^c   Haller, E E ^d   Miotkowski, I ^e   Ramdas, A K ^e   Miotkowska, S ^f  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c OptiWork Inc   (United States)

^d Lawrence Berkeley National Laboratory   (United States)

^e PURDUE UNIVERSITY   (United States)

^f INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANTICROSSINGS; BAND ANTICROSSING; LOCALIZED ELECTRONIC STATE; MATRIX; PRESSURE DEPENDENCE; STRONGLY NONLINEAR; VIRTUAL CRYSTAL APPROXIMATION;

ELECTRONIC STRUCTURE; ENERGY GAP; HYDROSTATIC PRESSURE; SELENIUM; ZINC; ZINC COMPOUNDS;

CERIUM ALLOYS;

EID: 79956031353     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1430853     Document Type: Article

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