SCOPUS 정보 검색 플랫폼

Volumn 308-310, Issue , 2001, Pages 284-289

Interaction between self-interstitials and the oxygen dimer in silicon

(8) Lindstrom J L a Hallberg, T b Hermansson, J a Murin, L I c Komarov, B A c Markevich, V P c,d Kleverman, M a Svensson, B G e

a LUND UNIVERSITY (Sweden)

b SWEDISH DEFENCE RESEARCH AGENCY (Sweden)

c INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS (Belarus)

d UNIVERSITY OF MANCHESTER (United Kingdom)

e ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

Electron irradiation; Oxygen; Self interstitials; Silicon

Indexed keywords

ANNEALING; BAND STRUCTURE; CRYSTAL DEFECTS; CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIMERS; ELECTRON IRRADIATION; INFRARED RADIATION; LATTICE VIBRATIONS; OXYGEN;

LOCAL VIBRATIONAL MODES (LVM);

SEMICONDUCTING SILICON;

EID: 17044459643 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00694-9 Document Type: Article

Times cited : (30)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.