Comparison of defects produced by fast neutrons and 60Co-gammas in high-resistivity silicon detectors using deep-level transient spectroscopy

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 388, Issue 3, 1997, Pages 335-339

  Moll, M ^a   Feick, H ^a   Fretwurst, E ^a   Lindstrom G ^a   Schutze C ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRON ENERGY LEVELS; ELECTRONS; GAMMA RAYS; IRRADIATION; NEUTRON IRRADIATION; NEUTRONS; RADIATION DAMAGE; SILICON;

SILICON DETECTORS;

RADIATION DETECTORS;

EID: 0031121260     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)00003-X     Document Type: Article

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