Temperature gradient controlled SiC crystal growth

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 278-286

  Anikin, M ^a   Madar, R ^a  

^a CNRS   (France)

Author keywords

'In situ' etching; 6H SiC crystal growth; Characterization; Sublimation

Indexed keywords

CRYSTAL GROWTH; ETCHING; INGOTS; NUCLEATION; SUBLIMATION; THERMAL GRADIENTS;

PINHOLE DENSITY;

SILICON CARBIDE;

EID: 0042726944     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01993-9     Document Type: Article

References (4)

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2. M.M. Anikin, R. Madar, A. Rouault, I. Garcon, L. Di. Cioccio, J.L. Robert, J. Camassel and J.M. Bluet, Proc. ICSCRM-95, Kyoto, Japan, 1996, p. 33.
3. Yu. M. Tairov, Mater. Sci. Eng., B29 (1995) 83.
4. R.A. Stein, Phys. B, (1993) 211.