Modeling of transport processes and kinetics of silicon carbide bulk growth

Journal of Crystal Growth

Volumn 225, Issue 2-4, 2001, Pages 299-306

  Chen, Q S ^a   Zhang, H ^a   Ma, R H ^a   Prasad, V ^a   Balkas, C M ^b   Yushin, N K ^b  

^a Stony Brook University   (United States)

^b Sterling Semiconductor Inc   (United States)

Author keywords

A1. Computer simulation; A1. Growth models; A1. Heat transfer; A1. Mass transfer; A2. Growth from vapor; B2. Semiconducting silicon carbide

Indexed keywords

COMPUTER SIMULATION; HEAT TRANSFER; MASS TRANSFER; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; VAPOR PHASE EPITAXY;

GROWTH MODELS;

SILICON CARBIDE;

EID: 0035334196     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00878-8     Document Type: Conference Paper

References (20)

1. Study of the equilibrium processes in the gas phase during silicon carbide sublimation
2. Modeling of heat transfer and kinetics of physical vapor transport growth of silicon carbide crystals