A practical model for estimating the growth rate in sublimation growth of SiC

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 89-92

  Raback P ^a   Yakimova, R ^b,c   Syvajarvi M ^b   Nieminen, R ^d   Janzen E ^b  

^a IT Center for Science   (Finland)

^b LINKÖPING UNIVERSITY   (Sweden)

^c Okmetic AB   (Sweden)

^d AALTO UNIVERSITY   (Finland)

Author keywords

Crystal growth; Mathematical modeling; Physical vapor transport; Silicon carbide

Indexed keywords

ABSORPTION; CRYSTAL GROWTH; DESORPTION; DIFFUSION IN GASES; HIGH PRESSURE EFFECTS; MASS TRANSFER; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBLIMATION; TEMPERATURE DISTRIBUTION; THERMAL GRADIENTS;

LATENT HEAT; PHYSICAL VAPOR TRANSPORT (PVT); SUBLIMATION GROWTH;

SILICON CARBIDE;

EID: 0032680909     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00452-8     Document Type: Article

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