Illumination, acid diffusion and process optimization considerations for 193 nm contact hole resists

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4690 I, Issue , 2002, Pages 150-159

  Kudo, Takanori ^a   Alemy, Eric L ^a   Dammel, Ralph R ^a   Kim, Woo Kyu ^a   Lee, Sang Ho ^a   Masuda, Seiya ^a   McKenzie, Douglas ^a   Rahman, M Dalil ^a   Romano, Andrew ^a   Padmanaban, Munirathna ^a   Chun, Jun Sung ^b   Jung, Jae Chang ^c   Lee, Sung Koo ^c   Shin, Ki Soo ^c   Kim, Hyeong Soo ^c  

^a CLARIANT CORPORATION   (United States)

^b CYPRESS SEMICONDUCTOR   (United States)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

193 nm resists; Acid diffusion; AZ AX 1050P; Contact hole; Illumination; Resist components

Indexed keywords

ACIDS; COMPUTER SIMULATION; DIFFUSION; MASKS; OPTICAL RESOLVING POWER; POLYMERS;

ACID DIFFUSION; CONTACT HOLE RESISTS;

PHOTORESISTS;

EID: 0141732944     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474214     Document Type: Article

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