Improved lithographic performance for resists based on polymers having a vinyl ether-maleic anhydride (VEMA) backbone

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue 1, 2001, Pages 119-130

  Kim, Hyun Woo ^a   Choi, Sang Jun ^a   Jung, Dong Won ^a   Lee, Sook ^a   Lee, Sung Ho ^a   Kang, Yool ^a   Woo, Sang Gyun ^a   Moon, Joo Tae ^a   Kavanagh, Robert ^b   Barclay, George ^b   Orsula, George ^b   Mattia, Joe ^b   Caporale, Stefan ^b   Adams, Tim ^b   Tanaka, Tsutomu ^b   Kang, Doris ^b  

^a SAMSUNG Electronics   (South Korea)

^b SHIPLEY COMPANY   (United States)

Author keywords

ArF; Chemically amplified resist; Cycloolefin polymer; Lithography; Photoresist; VEMA

Indexed keywords

ADHESION; DRY ETCHING; ESTERS; ETHERS; IMAGING SYSTEMS; OLEFINS; POLYMERS;

CHEMICALLY AMPLIFIED RESISTS;

PHOTORESISTS;

EID: 0002490087     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436840     Document Type: Article

References (10)