Modification of 193nm(ArF) photoresists by electron beam stabilization

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue 1, 2001, Pages 138-149

  Martens, Patrick ^a   Yamamoto, Shige ^a   Edamatsu, Kunishige ^b   Uetani, Yasunori ^b   Pain, Laurent ^c   Palla, Ramiro ^d   Ross, Matthew ^e   Livesay, William ^e  

^a Sumitomo Chemical America Inc   (United States)

^b SUMITOMO CHEMICAL CO LTD   (Japan)

^c CEA LETI   (France)

^d STMICROELECTRONICS   (France)

^e Electron Vision Corp San Diego   (United States)

Author keywords

193nm (ArF) Photoresist; Electron Beam Stabilization; Etch Selectivity; Line Slimming

Indexed keywords

ELECTRON BEAMS; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS;

ELECTRON BEAM STABILIZATION;

PHOTORESISTS;

EID: 0034755504     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436842     Document Type: Article

References (3)