The effect of various ArF resist shrinkage amplitude on CD bias

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4689 II, Issue , 2002, Pages 997-1006

  Ke, Chih Ming ^a   Gau, Tsai Sheng ^a   Chen, Pei Hung ^a   Yen, Anthony ^a   Lin, Burn J ^a   Otaka, Tadashi ^b   Iizumi, Takashi ^b   Sasada, Katsuhiro ^b   Ueda, Kazuhiro ^b  

^a Semiconductor Manufacturing Company Science Based Industrial Park   (China)

^b HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

Author keywords

ADI; AEI; APC; ArF resist shrinkage; CD bias; CD SEM

Indexed keywords

ELECTRIC POTENTIAL; ETCHING; OPTICAL RESOLVING POWER; SCANNING ELECTRON MICROSCOPY; SHRINKAGE;

OPTIMAL BEAM CONDITIONS;

PHOTORESISTS;

EID: 0036029770     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.473428     Document Type: Article

References (7)

1. Takanori Kudo et al., "Mechanistic Studies on the CD Degradation of 193 nm Resists during SEM Inspection", Journal of Photopolymer Science and Technology, Vol. 14, 3,2001, pp. 407-418.
2. Bo Su et al., " 193 nm resist shrinkage", Solid State Technology, May 2001, pp. 52-57.
3. C.M. Ke et al., "An Investigation of 193 nm Photo Resist CD Shrinkage After Trimming by High Density Plasma Etcher", SEMICON Taiwan 2001, IB01-05.
4. Yee and C.M.Ke, et al., "Stable E-beam metrology on ArF resist for Advanced feed-forward System" SPIE 4690-69.
5. Yoshinori Nakayama and Shinji Okazaki, "Proposal for a new submicron dimension reference for an electron beam metrology system", J. Vac. Sci. Technol. B6 (6), Nov/Dec 1988.
6. rd, Pergamon Press, p 252.
7. Mark Neisser, et al., "Mechanism Studies of Scanning Electron Microscope Measurement Effect on 193 nm Photoresist and the Development of Improved Line Width Measurement Methods" Proceedings of Interface 2000, pp. 43-52.