Si 2p core-level shifts at the Si(100) interface: An experimental study

Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 11, 1996, Pages 7686-7689

  Zhang, K ^a   Banaszak Holl, M ^a   Bender, J ^b   Lee, S ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b BROWN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000446518     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.7686     Document Type: Article

References (21)

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16. Numerous workers have documented this binding energy shift from 3.6 to 4.0 eV, see Refs. 1, 3, and 4. It has been clearly demonstrated that oxide films with a thickness of greater than 2 nm exhibit a binding energy shift of 4.0-4.1 eV when charging effects are taken into consideration [Y. Tao, Z. H. Lu, M. J. Graham and S. P. Tay, J. Vac. Sci. Technol. B 12, 2500 (1994)]. Since 0.4 eV is approximately half the 0.9-eV shift per formal oxidation state used in the orthodox model, we believe it is a significant effect that should not be discounted.
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