Self-assembling of nanovoids in 800-KeV Ge-implanted Si/SiGe multilayered structures

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 23, 2003, Pages

  Gaiduk, P I ^a   Larsen, A Nylandsted ^a   Hansen, J Lundsgaard ^a   Wendler, E ^b   Wesch, W ^b  

^a AARHUS UNIVERSITY   (Denmark)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

ARTICLE; ELECTRONICS; IMPLANTATION; ION IMPLANTATION; NANOPARTICLE; NANOVOID; SYNTHESIS; THERMAL ANNEALING;

EID: 0042666795     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.235311     Document Type: Article

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