Growth mechanism of cavities in MeV helium implanted silicon

Journal of Applied Physics

Volumn 91, Issue 11, 2002, Pages 9027-9030

  Grisolia, J ^a   Claverie, A ^a   Assayag, G Ben ^a   Godey, S ^b   Ntsoenzok, E ^b   Labhom, F ^c   Van Veen, A ^c  

^a CEMES CNRS   (France)

^b Centre National de la Recherche Scientifique   (France)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEAL TEMPERATURES; CAVITY GROWTH; CAVITY REGIONS; CAVITY SIZE; DIFFUSION IN SILICON; GROWTH MECHANISMS; HELIUM ATOM; HELIUM-3; IMPLANTED HELIUM; TRANSMISSION ELECTRON MICROSCOPY TEM;

ACTIVATION ENERGY; TRANSMISSION ELECTRON MICROSCOPY;

HELIUM;

EID: 0036607404     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1469207     Document Type: Article

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