Defects in Ge+-implanted Si studied by slow positron implantation spectroscopy

Semiconductor Science and Technology

Volumn 13, Issue 4, 1998, Pages 394-398

  Kuna, S A E ^a   Coleman, P G ^a   Nejim, A ^b   Cristiano, F ^b   Hemment, P L F ^b  

^a UNIVERSITY OF EAST ANGLIA   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; CRYSTAL GROWTH; GERMANIUM; ION IMPLANTATION; POINT DEFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SYNTHESIS (CHEMICAL);

POSITRON IMPLANTATION SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0032048733     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/4/007     Document Type: Article

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