Separation of vacancy and interstitial depth profiles in proton- and boron-implanted silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 334-338

  Pellegrino, P ^a   Leveque P ^a   Kortegaard Nielsen, H ^a   Hallen A ^a   Wong Leung, J ^b   Jagadish, C ^b   Svensson, B G ^a,c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c UNIVERSITY OF OSLO   (Norway)

Author keywords

DLTS; Ion implantation; Point defects; Silicon

Indexed keywords

COMPUTER SIMULATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ION IMPLANTATION; MATHEMATICAL MODELS; POINT DEFECTS; PROTONS; SEMICONDUCTING BORON;

INTERSTITIAL DEPTH PROFILES;

SEMICONDUCTING SILICON;

EID: 0036134741     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00874-6     Document Type: Article

References (26)