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Materials Science and Engineering: A

Volumn 253, Issue 1-2, 1998, Pages 240-248

The role of defect excesses in damage formation in Si during ion implantation at elevated temperature

(3) Holland, O W a Budai, J D a Nielsen, B b

a OAK RIDGE NATIONAL LABORATORY (United States)

b BROOKHAVEN NATIONAL LABORATORY (United States)

Author keywords

Damage; Defects; Ion implantation; Si

Indexed keywords

CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; PHASE TRANSITIONS;

DAMAGE FORMATION; SELF ION IRRADIATION; VACANCY DISTRIBUTION;

SEMICONDUCTING SILICON;

EID: 0038934469 PISSN: 09215093 EISSN: None Source Type: Journal
DOI: 10.1016/s0921-5093(98)00732-1 Document Type: Article

Times cited : (19)

References (33)

1
- 0346003810
- See for example: James F. Gibbons, Proceedings of the IEEE 60 (1972) 1062; G.F. Cerofolini, L. Meda, C. Volpones, J. Appl. Phys. 63 (1988) 4911; O.W. Holland, S.J. Pennycook, Gerald L. Albert, Appl. Phys. Lett. 55 (1989) 2503; O.W. Holland, C.W. White, Nucl. Inst. Meth. B59 (1991) 353 and references within.
- (1972) Proceedings of the IEEE , vol.60 , pp. 1062
- Gibbons, J.F.¹

2
- 36549097566
- See for example: James F. Gibbons, Proceedings of the IEEE 60 (1972) 1062; G.F. Cerofolini, L. Meda, C. Volpones, J. Appl. Phys. 63 (1988) 4911; O.W. Holland, S.J. Pennycook, Gerald L. Albert, Appl. Phys. Lett. 55 (1989) 2503; O.W. Holland, C.W. White, Nucl. Inst. Meth. B59 (1991) 353 and references within.
- (1988) J. Appl. Phys. , vol.63 , pp. 4911
- Cerofolini, G.F.¹ Meda, L.² Volpones, C.³

3
- 36549093618
- See for example: James F. Gibbons, Proceedings of the IEEE 60 (1972) 1062; G.F. Cerofolini, L. Meda, C. Volpones, J. Appl. Phys. 63 (1988) 4911; O.W. Holland, S.J. Pennycook, Gerald L. Albert, Appl. Phys. Lett. 55 (1989) 2503; O.W. Holland, C.W. White, Nucl. Inst. Meth. B59 (1991) 353 and references within.
- (1989) Appl. Phys. Lett. , vol.55 , pp. 2503
- Holland, O.W.¹ Pennycook, S.J.² Albert, G.L.³

4
- 0001221479
- and references within
- See for example: James F. Gibbons, Proceedings of the IEEE 60 (1972) 1062; G.F. Cerofolini, L. Meda, C. Volpones, J. Appl. Phys. 63 (1988) 4911; O.W. Holland, S.J. Pennycook, Gerald L. Albert, Appl. Phys. Lett. 55 (1989) 2503; O.W. Holland, C.W. White, Nucl. Inst. Meth. B59 (1991) 353 and references within.
- (1991) Nucl. Inst. Meth. , vol.B59 , pp. 353
- Holland, O.W.¹ White, C.W.²

5
- 0024108223
- J. Linnros, R.G. Elliman, W.L. Brown, J. Mater. Res. 3 (1988) 1208.
- (1988) J. Mater. Res. , vol.3 , pp. 1208
- Linnros, J.¹ Elliman, R.G.² Brown, W.L.³

6
- 0342399142
- H.H. Hosack, T.W. Houston, G.P. Pollack, Sol. State Tech. 12 (1990) 61.
- (1990) Sol. State Tech. , vol.12 , pp. 61
- Hosack, H.H.¹ Houston, T.W.² Pollack, G.P.³

7
- 5844273311
- M.A. Guerra, Sol. State Tech. 11 (1990) 75.
- (1990) Sol. State Tech. , vol.11 , pp. 75
- Guerra, M.A.¹

8
- 0038850838
- G.K. Celler, A.E. White, Mat. Res. Soc. Bull. 6 (1992) 40.
- (1992) Mat. Res. Soc. Bull. , vol.6 , pp. 40
- Celler, G.K.¹ White, A.E.²

9
- 0004013752
- March
- Laura Peters, Semiconductor International, March 1993, p. 48.
- (1993) Semiconductor International , pp. 48
- Peters, L.¹

10
- 0039443595
- O.W. Holland, T.P. Sjoreen, D. Fathy, J. Narayan, Appl. Phys. Lett. 45 (1984) 10.
- (1984) Appl. Phys. Lett. , vol.45 , pp. 10
- Holland, O.W.¹ Sjoreen, T.P.² Fathy, D.³ Narayan, J.⁴

11
- 0023435302
- A.H. van Ommen, M.P.A. Viegers, Appl. Surf. Sci. 30 (1987) 383.
- (1987) Appl. Surf. Sci. , vol.30 , pp. 383
- Van Ommen, A.H.¹ Viegers, M.P.A.²

12
- 0040035703
- O.W. Holland, D.S. Zhou, D.K. Thomas, Appl. Phys. Lett. 63 (1993) 896.
- (1993) Appl. Phys. Lett. , vol.63 , pp. 896
- Holland, O.W.¹ Zhou, D.S.² Thomas, D.K.³

13
- 0006713087
- D.S. Zhou, O.W. Holland, J.D. Budai, Appl. Phys. Lett. 63 (1993) 3580.
- (1993) Appl. Phys. Lett. , vol.63 , pp. 3580
- Zhou, D.S.¹ Holland, O.W.² Budai, J.D.³

14
- 0040035702
- D.V. Morgan (Ed.), Wiley, New York
- F.H. Eisen, in: D.V. Morgan (Ed.), Channeling, Wiley, New York, 1973, pp. 417-419.
- (1973) Channeling , pp. 417-419
- Eisen, F.H.¹

15
- 0000235265
- J. Biersack, L. Haggmark, Nucl. Inst. Meth. 174 (1980) 257.
- (1980) Nucl. Inst. Meth. , vol.174 , pp. 257
- Biersack, J.¹ Haggmark, L.²

16
- 3142708481
- Peter J. Schultz, K.G. Lynn, Rev. Mod. Phys. 60 (1988) 701.
- (1988) Rev. Mod. Phys. , vol.60 , pp. 701
- Schultz, P.J.¹ Lynn, K.G.²

17
- 0022722308
- A.M. Mazzone, Phys. Status Solids A 95 (1986) 149; and K. Touhouche, J. Jackman, A. Yelon, Nucl. Inst. Meth. B80/81 (1993) 857.
- (1986) Phys. Status Solids A , vol.95 , pp. 149
- Mazzone, A.M.¹

18
- 4243448457
- A.M. Mazzone, Phys. Status Solids A 95 (1986) 149; and K. Touhouche, J. Jackman, A. Yelon, Nucl. Inst. Meth. B80/81 (1993) 857.
- (1993) Nucl. Inst. Meth. , vol.B80-81 , pp. 857
- Touhouche, K.¹ Jackman, J.² Yelon, A.³

19
- 0001221479
- O.W. Holland, C.W. White, Nucl. Inst. Meth. B59/60 (1991) 353.
- (1991) Nucl. Inst. Meth. , vol.B59-60 , pp. 353
- Holland, O.W.¹ White, C.W.²

20
- 85162579267
- O.W. Holland, Ling Xie, Bent Nielsen, D.S. Zhou, J. Elect. Mat. 25 (1996) 1.
- (1996) J. Elect. Mat. , vol.25 , pp. 1
- Holland, O.W.¹ Xie, L.² Nielsen, B.³ Zhou, D.S.⁴

21
- 0000492764
- J.D. Eshelby, J. Appl. Phys. 25 (1954) 255.
- (1954) J. Appl. Phys. , vol.25 , pp. 255
- Eshelby, J.D.¹

22
- 5644282976
- J.W. Colbert, J.P. Karins, T.Y. Tan, Nucl. Inst. Meth. 182/183 (1981) 457.
- (1981) Nucl. Inst. Meth. , vol.182-183 , pp. 457
- Colbert, J.W.¹ Karins, J.P.² Tan, T.Y.³

23
- 0022716253
- P.J. Burnett, G.A.D. Briggs, J. Mater. Sci. 21 (1986) 1828.
- (1986) J. Mater. Sci. , vol.21 , pp. 1828
- Burnett, P.J.¹ Briggs, G.A.D.²

24
- 0004829003
- T.E. Haynes, O.W. Holland, Appl. Phys. Lett. 61 (1992) 61.
- (1992) Appl. Phys. Lett. , vol.61 , pp. 61
- Haynes, T.E.¹ Holland, O.W.²

25
- 36449008690
- J.K. Listebarger, K.S. Jones, J.A. Slinkman, J. Appl. Phys. 73 (1993) 4815.
- (1993) J. Appl. Phys. , vol.73 , pp. 4815
- Listebarger, J.K.¹ Jones, K.S.² Slinkman, J.A.³

26
- 21544437502
- H.L. Meng, S. Prussin, M.E. Law, K.S. Jones, J. Appl. Phys. 73 (1993) 955.
- (1993) J. Appl. Phys. , vol.73 , pp. 955
- Meng, H.L.¹ Prussin, S.² Law, M.E.³ Jones, K.S.⁴

27
- 36449007029
- O.W. Holland, D.K. Thomas, D.S. Zhou, Appl. Phys. Lett. 66 (1995) 1892.
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1892
- Holland, O.W.¹ Thomas, D.K.² Zhou, D.S.³

28
- 36849124209
- J.A. Brinkman, J. Appl. Phys. 25 (1954) 961.
- (1954) J. Appl. Phys. , vol.25 , pp. 961
- Brinkman, J.A.¹

29
- 85162595204
- J.A. Brinkman, Am. J. Phys. 24 (1956) 164.
- (1956) Am. J. Phys. , vol.24 , pp. 164
- Brinkman, J.A.¹

30
- 0026926282
- F.W. Saris, J.S. Custer, R.J. Schreutelkamp, R.J. Liefting, R. Wijburg, H. Wallinga, Microelectronic Engineering 19, 357 (1992); James W. Corbett, James P. Karins, Nucl. Instr. Meth. 182/183, (1981) 457 and references within.
- (1992) Microelectronic Engineering , vol.19 , pp. 357
- Saris, F.W.¹ Custer, J.S.² Schreutelkamp, R.J.³ Liefting, R.J.⁴ Wijburg, R.⁵ Wallinga, H.⁶

31
- 4243728491
- and references within
- F.W. Saris, J.S. Custer, R.J. Schreutelkamp, R.J. Liefting, R. Wijburg, H. Wallinga, Microelectronic Engineering 19, 357 (1992); James W. Corbett, James P. Karins, Nucl. Instr. Meth. 182/183, (1981) 457 and references within.
- (1981) Nucl. Instr. Meth. , vol.182-183 , pp. 457
- Corbett, J.W.¹ Karins, J.P.²

32
- 0017948718
- J.R. Dennis, E.B. Hale, J. Appl. Phys. 49 (1978) 1119.
- (1978) J. Appl. Phys. , vol.49 , pp. 1119
- Dennis, J.R.¹ Hale, E.B.²

33
- 0026138906
- M.D. Giles, J. Electrochem. Soc. 138 (1991) 1160.
- (1991) J. Electrochem. Soc. , vol.138 , pp. 1160
- Giles, M.D.¹

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