Implantation of Si under extreme conditions: The effects of high temperature and dose on damage accumulation

Journal of Electronic Materials

Volumn 25, Issue 1, 1996, Pages 99-106

  Holland, O W ^a   Xie, Ling ^a,c   Nielsen, Bent ^b   Zhou, D S ^a,d  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c NORTHWESTERN UNIVERSITY   (United States)

^d LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

Ion implantation; Lattice damage; Si

Indexed keywords

CRYSTAL LATTICES; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; MICROSTRUCTURE; PHASE TRANSITIONS;

CHEMICAL EFFECTS; DAMAGE ACCUMULATION; DOSE EFFECTS; LATTICE DAMAGE; RUTHERFORD BACKSCATTERING SPECTROMETRY;

SILICON;

EID: 0029679051     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666181     Document Type: Article

References (24)

1. H.H. Hosack, T.W. Houston and G.P. Pollack, Sol. State Tech. 12, 61 (1990).
2. M.A. Guerra, Sol. State Tech. 11, 75 (1990).
3. Laura Peters, Semiconductor International, March 1993, p. 48.
4. O.W. Holland, T.P. Sjoreen, D. Fathy and J. Narayan, Appl. Phys. Lett. 45, 1081 (1984).
5. S.R. Wilson and D. Fathy, J. Electron. Mater. 13, 127 (1984).
6. P.L.F. Hemment, E. Maydell-Ondrusz, K.G. Stephens, J.B. Butcher, D. Ioannou and J. Alderman, Nucl. Instr. and Meth. 209/210, 157 (1983).
7. James F. Gibbons, Proc. IEEE 60, 1062 (1972) and references within.
8. G.F. Cerofolini, L. Meda and C. Volpones, J. Appl. Phys. 63, 4911 (1988).
9. O.W. Holland, S.J. Pennycook and Gerald L. Albert, Appl. Phys. Lett. 55, 2503 (1989).
10. O.W. Holland and C.W. White, Nucl. Instr. and Meth. B59, 353 (1991).
11. Peter J. Schultz and K.G. Lynn, Review of Modern Physics 60, 701 (1988).
12. J. Biersack and L. Haggmark, Nucl. Instr. and Meth. 174, 257 (1980).
13. S. Visitserngtrakul, C.O. Jung, B.F. Cordts, P. Roitman and S.J. Krause, Mater. Res. Soc. Symp. Proc. 183, 135 (1990).
14. W. Wijaranakula, J.H. Matlock and H. Mollenkopf, J. Appl. Phys. 62, 4897 (1987).
15. C. Jassaud, J. Stomenos, J. Margail, M. Dupuy, B. Blanchard and M. Bruel, Appl. Phys. Lett. 46, 1064 (1985).
16. B.Y. Mao, P.H. Chang, H.W. Lam, B.W. Shen and J.A. Kennan, Appl. Phys. Lett. 48, 794 (1986).
17. B. Nielsen, K.G. Lynn, Yen-C. Chen and D.O. Welch, Appl. Phys. Lett. 51, 1022 (1987).
18. D.S. Zhou, O.W. Holland and J.D. Budai, Appl. Phys. Lett. 63, 3580 (1993).
19. M.K. El-Ghor, S.J. Pennycook, T.P. Sjoreen, C.W. White and J. Narayan, Mater. Res. Soc. Symp. Proc. 107, 79 (1988).
20. M.K. El-Ghor, S.J. Pennycook, F. Namavar and N.H. Karam, Appl. Phys. Lett. 57, 156 (1990).
21. D.M. Follstaedt, S.M. Myers, G.A. Petersen and J.W. Medernach, J. Electron. Mater. 25, 157 (1996).
22. A. Oshiyama, M. Saito and O. Sugino, Appl. Surf. Sci. 85, (1995) 239.
23. A. van Veen (private communication).
24. Ben G. Streetman, Solid State Electronic Devices (Englewood Cliffs, NJ: Prentice-Hall Inc., 1980), p. 116.