Buried-gate oxide thinning during epitaxial lateral overgrowth for dual-gated metal-oxide-semiconductor field-effect transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 1670-1674

  Watts, Josef S ^a,b   Neudeck, Gerold W ^a  

^a PURDUE UNIVERSITY   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042221699     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589208     Document Type: Article

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