Expression for the growth rate of selective epitaxial growth of silicon using dichlorosilane, hydrogen chloride, and hydrogen in a low pressure chemical vapor deposition pancake reactor

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 6, 1997, Pages 1902-1907

  Kongetira, Poonacha ^a,b   Neudeck, Gerald W ^a   Takoudis, Christos G ^a,c  

^a PURDUE UNIVERSITY   (United States)

^b SUN MICROSYSTEMS   (United States)

^c UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011726072     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589576     Document Type: Article

References (20)

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