Determination of the Gibbs free energy of formation of Ga vacancies in GaAs by positron annihilation

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 23, 2003, Pages

  Gebauer, J ^a,b   Lausmann, M ^a   Redmann, F ^a   Krause Rehberg, R ^a   Leipner, H S ^a   Weber, E R ^b   Ebert, Ph ^c  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b Lawrence Berkeley National Laboratory   (United States)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM;

ARTICLE; CONCENTRATION (PARAMETERS); ELECTRICITY; ELECTRONICS; ENERGY; ENTHALPY; ENTROPY; GIBBS FREE ENERGY; POSITRON; POSITRON ANNIHILATION; TEMPERATURE; THERMODYNAMICS; VAPOR PRESSURE;

EID: 0041743722     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.235207     Document Type: Article

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