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Volumn 74, Issue 1, 1999, Pages 49-51

Self- and interdiffusion in AlXGa1-XAs/GaAs isotope heterostructures

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0002954004     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123129     Document Type: Article
Times cited : (46)

References (16)
  • 10
    • 22244489363 scopus 로고    scopus 로고
    • note
    • 69Ga profile which rise from low to high concentrations are not affected by instrumental broadening caused by SIMS sputtering effects. This was checked with a deconvolution technique.
  • 12
    • 0010408932 scopus 로고
    • Diffusion in Solid Metals and Alloys
    • edited by Springer, Berlin
    • Diffusion in Solid Metals and Alloys, edited by H. Mehrer, Landolt-Börnstein, New Series, Group III, Vol. 26 (Springer, Berlin, 1990).
    • (1990) Landolt-Börnstein, New Series, Group III , vol.26
    • Mehrer, H.1
  • 15
    • 0005688480 scopus 로고
    • Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds
    • edited by Springer, Berlin
    • Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds, edited by O. Madelung, Landolt-Börnstein, New Series, Group III, Vol. 22, Pt. a (Springer, Berlin, 1989).
    • (1989) Landolt-Börnstein, New Series, Group III , vol.22 , Issue.PART A
    • Madelung, O.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.