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Volumn 112, Issue 6, 1999, Pages 301-314

Enhanced and retarded Ga self-diffusion in Si and Be doped GaAs isotope heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; INTERDIFFUSION (SOLIDS); PHASE EQUILIBRIA; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; TEMPERATURE;

EID: 0033319713     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00376-2     Document Type: Article
Times cited : (27)

References (43)
  • 39
    • 85031587941 scopus 로고    scopus 로고
    • The interdiffusion experiments of Muraki and Horikoshi were performed without elemental As inside the diffusion ampoule
    • The interdiffusion experiments of Muraki and Horikoshi were performed without elemental As inside the diffusion ampoule.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.