Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs

Journal of Applied Physics

Volumn 83, Issue 1, 1998, Pages 561-566

  Luysberg, M ^a,c   Sohn, H ^a   Prasad, A ^a   Specht, P ^a   Liliental Weber, Z ^a   Weber, E R ^a   Gebauer, J ^b   Krause Rehberg, R ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001205640     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366723     Document Type: Article

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