Equilibrium vacancies in Te-doped GaAs studied by positron annihilation

Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 905-910

  Gebauer, J ^a   Krause Rehberg, R ^a   Lausmann, M ^a   Lippold, G ^b  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

Equilibrium defects; Ga vacancy; GaAs; Positron annihilation; Post growth annealing

Indexed keywords

ANNEALING; HIGH TEMPERATURE EFFECTS; PRESSURE EFFECTS; QUENCHING; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; STOICHIOMETRY; TELLURIUM; VAPOR PRESSURE;

EQUILIBRIUM VACANCIES; MONOVACANCIES; POSITRON ANNIHILATION SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031338856     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.905     Document Type: Article

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