SCOPUS 정보 검색 플랫폼

Volumn 273-274, Issue , 1999, Pages 705-709

Influence of stoichiometry and doping on vacancies in n-type GaAs

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FERMI LEVEL; HIGH TEMPERATURE EFFECTS; POSITRONS; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR DOPING; STOICHIOMETRY;

POSITRON ANNIHILATION; POSITRON LIFETIME SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033313791 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(99)00615-8 Document Type: Article

Times cited : (5)

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