Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy

Applied Physics Letters

Volumn 82, Issue 13, 2003, Pages 2059-2061

  Gebaue, J ^a   Weber, E R ^a   Jager N D ^b   Urban, K ^b   Ebert, Ph ^b  

^a Lawrence Berkeley National Laboratory   (United States)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL GROWTH; DOPING (ADDITIVES); FERMI LEVEL; HALL EFFECT; SCANNING TUNNELING MICROSCOPY;

COMPENSATION MECHANISMS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037474979     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1563835     Document Type: Article

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