A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition

Materials Letters

Volumn 57, Issue 26-27, 2003, Pages 4218-4221

  Ji, Liang Wen ^a   Su, Yan Kuin ^a   Chang, Shoou Jinn ^a   Wu, Liang Wen ^a,b   Fang, Te Hua ^c   Xue, Qi Kun ^d   Lai, Wei Chi ^a   Chiou, Yu Zung ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b South Epitaxy Corporation   (Taiwan)

^c SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d INSTITUTE OF PHYSICS   (China)

Author keywords

Atomic force microscopy; FWHM; InGaN; PL; Quantum dot

Indexed keywords

ATOMIC FORCE MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS;

OUTPUT POWER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0041728694     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(03)00293-3     Document Type: Article

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