White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

IEEE Photonics Technology Letters

Volumn 15, Issue 1, 2003, Pages 18-20

  Sheu, J K ^a   Chang, S J ^b   Kuo, C H ^b   Su, Y K ^b   Wu, L W ^b   Lin, Y C ^b   Lai, W C ^b   Tsai, J M ^c   Chi, G C ^a   Wu, R K ^d  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c South Epitaxy Corporation   (Taiwan)

^d Nantex Industry Corporation   (Taiwan)

Author keywords

Color temperature; Color rendering index; GaN; Phosphor; White light light emitting diode (LED)

Indexed keywords

ELECTRIC CURRENTS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED OPTOELECTRONICS; LIGHT EMISSION; PHOSPHORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE; ULTRAVIOLET RADIATION;

COLOR RENDERING INDEX; COLOR TEMPERATURE; INDIUM GALLIUM NITRIDE; INJECTION CURRENT;

LIGHT EMITTING DIODES;

EID: 0037248675     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.805852     Document Type: Article

References (12)

1. S. Nakamura and G. Fasol, The Blue Laser Diode, Berlin, Germany: Springer-Verlag, 1997, pp 216-219.
2. J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, and Y. K. Su, "White-light emission from InGaN/GaN multiquantum well light-emitting diodes with Si and Zn co-doped active well layer," IEEE Photon. Technol. Lett., vol. 14, pp. 450-452, Apr. 2002.
3. X. Guo, J. W. Graff, and E. F. Schubert, "Photon-recycling semiconductor light-emitting diodes," in IEDM Technol. Dig., IEDM-99, 1999, pp. 600-605.
4. F. Hide, P. Kozody, S. P. DenBaars, and A. J. Heeger, "White light from InGaN/conjugated polymer hybrid light-emitting diodes," Appl. Phys. Lett., vol. 70, pp. 2664-2666, 1997.
5. J. Han, M. H. Crawford, R. J. Shul, J. J. Figiel, L. Zhang, Y. K. Song, H. Zhou, and A. V. Nurmikko, "AlGaN/GaN quantum well ultraviolet light-emitting diodes," Appl. Phys. Lett., vol. 73, no. 12, pp. 1688-1690, Sept. 1998.
6. Y. Narukawa, I. Niki, K. Izuno, M. Yamada, Y. Murazaki, and T. Mukai, "Phosphor-conversion white light-emitting diodes using InGaN near-ultraviolet chip," Jpn. J. Appl. Phys. Lett., vol. 41, pp. L371-L373, 2002.
7. 0.3Ga0.7N-GaN short-period superlattice tunneling contact layer," IEEE Electron. Device Lett., vol. 22, pp. 460-462, Oct. 2001.
8. 0.85N/GaN superlattice," IEEE Electron Device Lett., vol. 22, pp. 160-162, Apr. 2001.
9. ____, "Enhanced output power in an InGaN-GaN multi-quantum well light-emitting diode with asymmetric wells," IEEE Photon. Technol. Lett., vol. 13, pp. 1164-1166, Nov. 2001.
10. J. K. Sheu, Y. K. Su, G. C. Chi, P. L. Koh, M. J. Jou, C.M. Chang, C. C. Liu, and W. C. Hung, "High-transparency Ni/Au ohmic contact to p-type GaN," Appl. Phys. Lett., vol. 74, pp. 2340-2342, 1999.
11. S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, and J. M. Tsai, "400 nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes," IEEE J. Select. Topics Quantum Electron., vol. 8, pp. 744-748, July/Aug. 2002.
12. J. K. Sheu, G. C. Chi, Y. K. Su, C. C. Liu, C. M. Chang, W. C. Hung, and M. J. Jou, "Luminescence of an InGaN/GaN multiple quantum wells light-emitting diode," Solid-State Electron., vol. 44, pp. 1055-1058, 2000.